Jeongwoo Yang
About Jeongwoo Yang
Jeongwoo Yang is a SiC Sr. Principal Design Engineer at onsemi, with extensive experience in developing advanced power device technologies. He has a strong background in collaborating with global teams and holds both a Master's and Bachelor's degree in Electrical Electronics Engineering.
Current Role at Onsemi
Jeongwoo Yang currently holds the position of SiC Sr. Principal Design Engineer at Onsemi, a role he has occupied since 2023. He works on-site in Bucheon, Korea. In this capacity, he focuses on the design and development of silicon carbide (SiC) technology, contributing to the advancement of power device solutions.
Previous Experience at Onsemi
Jeongwoo Yang has a significant history with Onsemi, having worked there for over a decade. He served as an IGBT Staff Design Engineer from 2011 to 2017, followed by a role as SiC Principal Design Engineer from 2017 to 2022. His tenure in these positions involved collaboration with global teams and the development of advanced power device technologies.
Educational Background
Jeongwoo Yang has a solid educational foundation in Electrical and Electronics Engineering. He earned his Bachelor's degree from Chung-Ang University in 2008 and continued his studies at Korea University, where he achieved a Master's degree in the same field in 2011. This academic background supports his expertise in power device technology.
Expertise in Power Device Technology
Jeongwoo Yang possesses extensive experience in developing advanced technology for power devices, including IGBT, MOSFET, Diode, and Thyristor. His in-depth knowledge of SiC MOSFET technology positions him as a knowledgeable resource in the field, enabling him to contribute effectively to innovative projects.
Collaboration with Global Teams
Throughout his career, Jeongwoo Yang has demonstrated a strong track record of collaborating with multi-site, global teams on various projects. This experience highlights his ability to work effectively in diverse environments, contributing to the successful development of power device technologies.