Muhammad Faiz Sis
About Muhammad Faiz Sis
Muhammad Faiz Sis is a Front Metal Process Engineer at ON Semiconductor, where he has worked since 2019. He specializes in process optimization and has a background in Electronic Engineering from Universiti Malaysia Perlis.
Work at ON Semiconductor
Currently, Muhammad Faiz Sis serves as a Front Metal Process Engineer at ON Semiconductor, a position he has held since 2019 in Seremban, Negri Sembilan, Malaysia. His role involves leading process optimization initiatives and ensuring quality improvements in manufacturing. Prior to this, he worked as a Diffusion Process Engineer from 2013 to 2018, where he focused on enhancing production efficiency. He was also part of the Manual Handling Reduction Team for one year in 2018-2019, contributing to operational improvements.
Education and Expertise
Muhammad Faiz Sis earned a Bachelor's degree in Electronic Engineering from Universiti Malaysia Perlis, where he studied from 2010 to 2013. His educational background provides a solid foundation for his engineering roles. He specializes in process optimization, utilizing design of experiments and analytical methodologies to improve product yield and cycle time in semiconductor manufacturing.
Background
Muhammad Faiz Sis has extensive experience in the semiconductor industry, particularly at ON Semiconductor. His career spans various roles, starting as a Diffusion Process Engineer and later transitioning to Front Metal Process Engineer. He has been involved in significant projects that focus on reducing errors in manufacturing processes and optimizing production techniques.
Achievements
Throughout his career at ON Semiconductor, Muhammad Faiz Sis has implemented several successful initiatives. He led the Metal Sputter Process for Varian 3290 and developed solutions that minimized human and equipment errors. Notably, he achieved a 60% improvement in AlSi Hazy Trend Reduction, resulting in annual savings of USD 44,733. Additionally, he reduced inking rejection by 30% through the qualification of new gas and chamber pressure controllers.