Joshua Hanson
About Joshua Hanson
Joshua Hanson is a Graduate Student Intern at Sandia National Laboratories and a Graduate Research Assistant at the University of Illinois at Urbana-Champaign, specializing in reduced-order radiation models for semiconductor devices.
Title
Joshua Hanson is currently a Graduate Student Intern at Sandia National Laboratories. He also holds the position of Graduate Research Assistant at the University of Illinois at Urbana-Champaign.
Education and Expertise
Joshua Hanson has a diverse educational background. He achieved a Ph.D. in Electrical Engineering from the University of Illinois at Urbana-Champaign (2020-2023). He also holds two M.S. degrees: one in Mathematics (2018-2021) and another in Electrical Engineering (2018-2020), all from the same institution. Additionally, he earned dual B.S. degrees in Physics and Electrical Engineering from Clemson University (2014-2018). Hanson's expertise spans electrical engineering, physics, and mathematics.
Professional Background
Joshua Hanson's professional background includes multiple research and internship roles. At Sandia National Laboratories, he collaborates on developing reduced-order radiation models for semiconductor devices, employing finite element analysis, numerical simulation, machine learning, and control theory. At the University of Illinois at Urbana-Champaign, he serves as a Graduate Research Assistant since 2018. His past roles include Senior Honors Research Project in Electrical Engineering and Physics Senior Thesis Project at Clemson University (2017-2018), and Summer Undergraduate Research Fellowship (SURF) REU Program at the National Institute of Standards and Technology in 2016 and 2017.
Research Focus and Collaborations
Joshua Hanson focuses on creating efficient models for large-scale circuit simulations that maintain fidelity to physics-based descriptions. His research at Sandia National Laboratories involves collaborations with Biliana Paskaleva and Pavel Bochev, particularly in developing reduced-order models for semiconductor devices. These models are designed to optimize computational efficiency while accurately representing physical phenomena.