Fernando Cuello Garcia
About Fernando Cuello Garcia
Fernando Cuello Garcia is a Research Assistant at Yale University, where he has contributed to the development of alternative memory devices since 2020. He holds a Bachelor of Science in Computer Science and Film and Media Studies and has conducted independent research in electrical engineering and applied physics.
Work at Yale University
Fernando Cuello Garcia has been employed as a Research Assistant at Yale University since 2020. In this role, he contributes to the development of alternative memory devices known as FEDRAM in Dr. Tso-Ping Ma's Lab. His work involves characterizing semiconductors by analyzing polarization versus electric field and I-V plots. He also focuses on verifying the validity of the negative capacitance theory for FET scaling as part of his research activities.
Education and Expertise
Fernando studied at Yale University, where he pursued a Bachelor of Science in Computer Science and Film and Media Studies from 2020 to 2024. He also attended the University of Oxford for 11 months in 2017. Additionally, he was a Visiting Student at Stanford University during the Summer Quarter of 2019. His educational background includes a High School Diploma from Carol Morgan School and studies at Comunidad Educativa Lux Mund.
Background
Before joining Yale University, Fernando worked as a Technician at PuntoMac in Santo Domingo from 2016 to 2017. He has a strong foundation in electrical engineering and applied physics, which he applies in his current research. Fernando engages in independent research by investigating 2-3 electrical engineering or applied physics papers weekly.
Research Contributions
Fernando has developed a two-dimensional equation to model ferroelectric film domains in MFIM and MFMIM structures. His research contributions focus on advancing the understanding of semiconductor characteristics and the implications of negative capacitance theory in field-effect transistors.